About "fermi"--Carrier densities in semiconductors

"fermi" computes the electron and hole concentrations for a homogeneous semiconductor under a variety of conditions. The user specifies the band gap (including temperature dependence), donor and acceptor binding energies, donor and acceptor concentrations, and the hole and electron effective masses. The program returns a plot of the temperature dependence of the carrier concentrations which illustrates the intrinsic, extrinsic and freeze-out regimes.

"fermi" was programmed by Russ Thompson and Joerg Draeger.

About the SSS Project.


Table of contents for Chapter 11 of Simulations for Solid State Physics

  1. Introduction
  2. Pure (intrinsic) material
  3. Doped (extrinsic) material
    1. Charge neutrality with impurities
    2. Extrinsic regime
    3. Limits of the extrinsic regime
    4. Compensation
  4. Summary
  5. Appendix: "fermi" -- the program